Semiconductor Lithography Equipment
Wide-Field / High Resolution i-line Stepper

  • Features
  • Specifications

Basic Information

Model Name: FPA-5510iX


FPA-5510iX steppers provide large-field device imaging without stitching adjacent fields

FPA-5510iX steppers adopt a high-NA, 1/2 reduction projection lens to deliver 0.5 um resolution across a large 50 mm x 50 mm exposure field. The FPA-5510iX is suitable for products requiring large field exposure such as *MEMS devices and image sensors that can require a larger field than Front-End-Of-the-Line (FEOL) lithography exposure area (26mm x 33mm) and can avoid pattern **stitching that is disadvantageous from the viewpoint of image quality & productivity. The ability to expose large fields in a single exposure provides the FPA-5510iX with a big advantage.

  • * MEMS
    MEMS: "Micro Electro Mechanical Systems" or MEMS are devices with a micron level mechanical structures that integrate sensors, actuators and electronic circuits.
  • **Stitching exposure: A method of increasing exposure field size by connecting two or more adjacent exposure regions. The positional accuracy and alignment of the adjacent exposure regions directly affects the yield.

FPA-5510iX steppers deliver stable performance with proven FPA-5510 Platform

FPA-5510 platform steppers have already been adopted for both Frontend & Backend processing, boasting high utilization rates and reliability. FPA-5510iX steppers build upon this platform to offer the same Cost of Ownership benefits as earlier FPA-5510iZ & FPA-5510iV steppers.

FPA-5510iX steppers are compatible with an extensive list of optional functions

FPA-5510iX steppers can be also configured with available options to enable alignment and productivity optimization.
Available options include WB-OAS (WideBand-OAS) System that provides a wide range of alignment illumination modes for process optimization. By covering the band from the visible light to the infrared light, stable alignment is available through all RGB layers of a color filter process. WB-OAS wavelengths also enable alignment to marks on the backside of silicon wafers in a BackSide Illumination (BSI) process.
Overlay can be further improved with the optional EAGA (Enhanced Advanced Global Alignment) function that provides field by field overlay measurement and compensation that allows the stepper to compensate for nonlinear overlay errors.
To improve productivity, the optional OCCS (Oxygen Concentration Control System function) can be applied to reduce the oxygen concentration in the area between a wafer and the projection lens. In this low-oxygen environment, it is possible to increase the reaction sensitivity (speed) of some photoresists to reduce required exposure doses, thereby improving throughput.


≦ 500 nm
NA (Numerical Aperture)
0.37~0.28 (Variable)
Reduction Ratio
Field Size
52 mm (max) x 56 mm (max) (Φ70.7 mm inside)
Exposure Wavelength
i-line 365 nm
Reticle Size
6 inch
Wafer Size
200 mm (8 inch), 300 mm (12 inch) (Selection)
Overlay Accuracy
≦ 50 nm
Main Body Dimensions
(W) 2,300 x (D) 3,340 x (H) 2,700 mm
Major Options
Chemical Filter
Resist Outgas Exhaust Unit
PC Remote Console
GEM-compliant online software
Pellicle Particle Checker
Wide-Band Off-Axis Scope (WB-OAS)
Oxygen Concentration Control System (OCCS)
Enhanced AGA (EAGA, shot-by-shot overlay)